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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by S2800/D Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. * Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability * Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability * Blocking Voltage to 800 Volts A S2800 Series SCRs 10 AMPERES RMS 50 thru 800 VOLTS G K CASE 221A-04 (TO-220AB) STYLE 3 MAXIMUM RATINGS (TJ = 25C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (TJ = 25 to 100C, Gate Open) F A B S2800 D M N Peak Non-repetitive Reverse Voltage and Non-Repetitive Off-State Voltage(1) F A B D M N IT(RMS) TC = 75C ITSM I2t PGM PG(AV) TJ Tstg 100 40 16 0.5 -40 to +100 -40 to +150 Amps A2s Watts Watt C C Symbol VRRM VDRM 50 100 200 400 600 800 VRSM VDSM 75 125 250 500 700 900 10 Amps Volts Value Unit Volts S2800 RMS Forward Current (All Conduction Angles) Peak Forward Surge Current (1 Cycle, Sine Wave, 60 Hz, TC = 80C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (t p 10 s) Forward Average Gate Power Operating Junction Temperature Range Storage Temperature Range 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data (c) Motorola, Inc. 1995 1 S2800 Series THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 2 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Peak Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) Instantaneous On-State Voltage, (ITM = 30 A Peak, Pulse Width TC = 25C TC = 100C VT IGT VGT IH tgt tq Symbol IDRM, IRRM -- -- -- -- -- -- -- -- -- -- 1.7 8 0.9 10 1.6 25 10 2 2 15 1.5 20 -- -- Min Typ Max Unit A mA Volts mA Volts mA s s p 1 ms, Duty Cycle p 2%) Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 30 Ohms) Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 30 Ohms) Holding Current (Gate Open, VD = 12 Vdc, IT = 150 mA) Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 2 A, IGR = 80 mA) Circuit Commutated Turn-Off Time (VD = VDRM, ITM = 2 A, Pulse Width = 50 s, dv/dt = 200 V/s, di/dt = 10 A/s, TC = 75C) Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, Exponential Rise, TC = 100C) dv/dt -- 100 -- V/s FIGURE 1 - CURRENT DERATING TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) P(AV), AVERAGE POWER DISSIPATION (WATTS) HALF-WAVE CURRENT WAVEFORM: A SINUSOIDAL LOAD: RESISTIVE OR INDUCTIVE FIGURE 2 - POWER DISSIPATION 12 10 8 6 4 2 0 0 HALF-WAVE CURRENT WAVEFORM: A SINUSOIDAL LOAD: RESISTIVE OR INDUCTIVE 100 MAXIMUM MAXIMUM IT(RMS) 90 IT(AV) 80 70 0 2 4 6 8 10 IT(AV), IT(RMS), ON-STATE CURRENT (AMPS) RMS CURRENT AV CURRENT 2 4 6 8 10 IT(AV), IT(RMS), MAXIMUM ON-STATE CURRENT (AMP) 2 Motorola Thyristor Device Data S2800 Series PACKAGE DIMENSIONS -T- B F C SEATING PLANE T S STYLE 3: PIN 1. 2. 3. 4. NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.39 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 4 Q 123 A U K H Z L V G D N J R CATHODE ANODE GATE ANODE CASE 221A-04 (TO-220AB) Motorola Thyristor Device Data 3 S2800 Series Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 *S2800/D* Motorola Thyristor Device Data S2800/D |
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